Penn State researchers demonstrated 3D integration of semiconductors at a massive scale, characterizing tens of thousands of devices using 2D transistors made with 2D semiconductors, enabling ...

Their paper details 3D sequential integration of silicon-germanium (SiGe) heterojunction bipolar transistors (HBT), RF SOI switches, and high-quality passives on a single wafer—opening a path to ...

Joint Work Shows Next Generations of RF and Optical Front-End Modules (FEM) Could Be Built by the Assembly of Different Silicon Technologies at Wafer Level, Allowing the Dense Co-integration of ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...

Engineers suggest a way to fit more transistors on a chip by seamlessly implementing 3D integration with 2D materials. Moore's Law, a fundamental scaling principle for electronic devices, forecasts ...