This application note covers the parasitic turn-on effect due to the Miller capacitor and how it is mitigated using an Active Miller Clamp. One of the common problems faced when operating an IGBT is ...

ST’s STGAP3S family of gate drivers for SiC and IGBT power switches combines ST’s latest galvanic isolation technology with optimised desaturation protection and flexible Miller-clamp architecture. ST ...

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimized desaturation protection ...

Texas Instruments is aiming at electric vehicle traction inverters with a functional safety-compliant isolated gate driver for silicon carbide mosfets and IGBTs. Called UCC5880-Q1, it is in ...

Power Integrations launched a family of ASIL B-qualified, dual-channel, plug-and-play gate-driver boards for both SiC MOSFETs and silicon IGBTs. At PCIM Europe, Power Integrations announced the SCALE ...

This manual outlines the features of the ACPL-P349/W349 Evaluation Board and the configuration required for evaluating Isolated IGBT or SiC/GaN MOSFET Gate Drivers. Visual inspection is required to ...

The VLA502-01 is a hybrid integrated circuit (Figure 1) intended as a gate driver for high power IGBT modules. This circuit has been optimized for use with Powerex NFH-Series IGBT modules. However, ...

YOKOHAMA, Japan--(BUSINESS WIRE)--Tokyo Electron Device Limited (TED) has announced the launch of the newly developed IGBT (Insulated Gate Bipolar Transistor) gate driver TD-BD-IGFB05K with an ...

Our 1ED44173/5/6 are the new low side gate driver ICs that integrate over-current protection (OCP), FAULT status output and enable function. This high integration level is excellent for the digitally ...

STMicroelectronics’ STGAP3S family of gate drivers for silicon-carbide (SiC) and IGBT power switches combines ST’s latest robust galvanic isolation technology with optimised desaturation protection ...