SAN JOSE — KLA-Tencor Corp. today announced the addition of an etch modeling and analysis module to its Prolith lithography simulation and modeling software to help users accelerate advanced ...

China has built a prototype EUV (extreme ultraviolent) lithography machine in a high-security laboratory in Shenzhen. They ...

China's reported development of its own extreme ultraviolet (EUV) lithography machine to make advanced semiconductors for ...

The groundbreaking discovery could open new doors for other researchers working with delicate materials such as cell membranes. (Nanowerk News) Imagine drawing on something as delicate as a living ...

At this year's IEEE International Electron Devices Meeting (IEDM 2025), imec, a research and innovation hub in advanced ...

Until EUV lithography becomes a reality, multiple patterning technologies such as triple litho-etch (LELELE), self-aligned double patterning (SADP), and self-aligned quadruple patterning (SAQP) are ...

Several fab tool vendors are rolling out the next wave of self-aligned patterning technologies amid the shift toward new devices at 10/7nm and beyond. Applied Materials, Lam Research and TEL are ...

Belgian research lab Imec has revealed advances single-print high numerical aperture EUV lithography at the ‘SPIE Photomask Technology + EUV Lithography’ conference in Monterey California: Line ...

SAN JOSE, Calif. — For next-generation memory production, 193-nm lithography with self-aligned double-patterning (SADP) are the technology of choices over rival schemes, according to an analyst.

During a visit by President Barack Obama in February, Intel executives announced plans to build a new semiconductor facility in Chandler, Ariz. To cost more than $5 billion, the plant will be the most ...

Extreme UV lithography (EUVL) and 193 nm immersion lithography enhanced by double-patterning techniques will be sufficient to maintain the lithography roadmap for several technology nodes. That was ...