FETs are mono-polar transistors. The current passing from drain to source doesn’t cross a P-N junction, as in a bipolar transistor. Because of this, the parts are resistive when you turn them on with ...
Central Semiconductor, manufacturer of discrete semiconductors, recently released the CMXSTB Series surface-mount stabistors packaged in the SOT-26 case. This new series consists of the 1.2-V ...
onsemi’s 1700-V EliteSiC MOSFETs and EliteSiC Schottky diodes provide reliable, efficient operation for energy infrastructure and industrial drive applications. The 1700-V NTH4L028N170M1 MOSFET brings ...
Infineon Technologies AG has unveiled a new family of CoolSiC MOSFETs with a breakdown voltage of 2,000 V to address growing demand for increased power density, while maintaining system reliability ...
A technical paper titled “Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)” was published by researchers at University of Illinois at Urbana–Champaign.
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