“With BVceo up to 100V, continuous current to 10A – and 20A peak – and saturation voltage as low as 17mV, these transistors ...

Cree, Inc. announces availability of its Silicon Carbide (SiC) power products, world-class 600V SiC Junction Barrier Schottky (JBS) diodes. Cree, Inc. announces availability of its Silicon Carbide ...

A new 600V GaAs Power Schottky diode is compared with Si and SiC diodes in a 200W CCM-PFC system. With both, GaAs and SiC, the PFC system losses were reduced up to 25%. Higher on-state losses of GaAs ...

UnitedSiC has added four silicon carbide junction barrier Schottky (JBS) diodes complement its SiC FET and JFET transistor products. The UJ3D 1,200V and 1,700V devices are part of the company’s 3rd ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...

Many power management applications use Schottky diodes for the parallel operation of multiple power sources. This type of power redundancy is often found in systems with solid-state drives (SSDs), ...