Silicon carbide devices are displacing their incumbent silicon counterparts in several high-volume power applications. As SiC market share continues to grow, the industry is lifting the last barriers ...
In preparation for doubling capacity, X-FAB Texas has purchased a second heated ion implanter for use in manufacturing 6-inch SiC wafers. Delivery of this heated ion implanter is expected by the end ...
Despite silicon carbide’s (SiC) promise over conventional silicon for the design of next-generation power electronics devices, broad adoption of this high-performance compound semiconductor has been ...
New high-volume 200mm silicon carbide manufacturing facility for power devices and modules, as well as test and packaging, to be built in Catania, Italy Projected 5 billion euros multi-year investment ...
Silicon carbide (SiC) is a crystalline material utilized to develop a wide array of electronic devices, including transistors and other high-power, high-frequency, and high-temperature devices. As ...
Silicon carbide production is ramping quickly, driven by end market demand in automotive and price parity with silicon. Many thousands of power semiconductor modules already are in use in electric ...
SiC is extensively used in microelectronic devices owing to its several unique properties. However, low yield and high cost of the SiC manufacturing process are the major challenges that must be ...
Singapore, 10th January 2022 –The Institute of Microelectronics (IME) at the Agency for Science, Technology and Research (A*STAR) and Soitec (Euronext Paris) have announced a research collaboration to ...
Geneva, Switzerland, May 31, 2024 – STMicroelectronics (NYSE: STM), a global semiconductor leader serving customers across the spectrum of electronics applications, announces a new high-volume 200mm ...
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